PJSD12TS Datasheet | PanJit Semiconductor

FEATURES - 120 Watts peak pules power( tp=8/20μs) - Small package for use in portable electronics - Suitable replacement for MLV’S in ESD protection applications - Low clamping voltage and leakage current - In pliance with EU Ro HS 2002/95/EC directives 3~36 Volts POWER 120 Watts APPLICATIONS - Case: SOD-523 plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Approx Weight: 0.0014 grams - Marking : PJSD03TS : KD PJSD05TS : KE PJSD07TS : KF PJSD08TS : KR PJSD12TS : LE PJSD15TS : LM PJSD24TS : LZ PJSD36TS : MP 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power Dissipation (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPP V ESD TJ TSTG Value 120 25 -50 to +150 -50 to +150 Units W KV ELECTRICALCHATACTERISTICS PJSD03TS Parameter Reverse Stand-Off Voltage Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1m A V R=3.3V I PP=5A 0Vdc Bias=f=1MHz 3.3Vdc Bias=f=1MHz Min. 4 Typical Max. 3.3 200 6.5 200 100 Units V V μA V p F p F .. Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance July 20.2010-REV.00 PAGE . 1 PJSD03TS~PJSD36TS PJSD05TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1m A VR=5V I PP=5A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6.0 Typical Max. 5 5 9 110 60 Units V V μA V p F p F PJSD07TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1m A VR=7V I PP=8.8A 0Vdc Bias=f=1MHz Min. 7.5 Typical Max. 7.0 150 22.7 85 Units V V n A V p F PJSD08TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction...