PJW4N10 Overview
PPJW4N10 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 4A SOT-223.
PJW4N10 Key Features
- RDS(ON), VGS@10V,ID@2A<258mΩ
- RDS(ON), VGS@6V,ID@1A<268mΩ
- Low On-Resistance
- Low input capacitance
- Lead free in pliance with EU RoHS 2011/65/EU directive
- Green molding pound as per IEC61249 Std
- Case : SOT-223 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.043 ounces, 0.123 grams
- Marking: W4N10