Datasheet4U Logo Datasheet4U.com

PJX8807 - P-Channel Enhancement Mode MOSFET

Features

  • Low Voltage Drive (1.2V).
  • Advanced Trench Process Technology.
  • Specially Designed for Load switch, PWM.

📥 Download Datasheet

Datasheet preview – PJX8807

Datasheet Details

Part number PJX8807
Manufacturer Pan Jit International
File Size 270.50 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet PJX8807 Datasheet
Additional preview pages of the PJX8807 datasheet.

📁 Similar Datasheet

  • PJX8806 - 20V N-Channel MOSFET (PanJit International)
  • PJX17N80T - N-Channel MOSFETS (Potens semiconductor)
  • PJX20N60D - N-Channel MOSFETS (Potens semiconductor)
  • PJX30N65T - N-Channel MOSFETS (Potens semiconductor)
  • PJX53N65D - N-Channel MOSFETS (Potens semiconductor)
  • PJX60N60T - N-Channel MOSFETS (Potens semiconductor)
Other Datasheets by Pan Jit International
  • PJX8802 - 20V N-CHANNEL MOSFET
  • PJX8803 - P-Channel Enhancement Mode MOSFET
  • PJX8804 - N-Channel Enhancement Mode MOSFET
  • PJX8805 - P-Channel Enhancement Mode MOSFET
  • PJX8812 - 30V N-Channel MOSFET
  • PJX8838 - N-Channel Enhancement Mode MOSFET
  • PJX8839 - P-Channel Enhancement Mode MOSFET
  • PJX8872B - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
PPJX8807 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Load switch, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00009 ounces, 0.
Published: |