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SiC10A065ND - SILICON CARBIDE SCHOTTKY DIODE

Key Features

  • Temperature Independent Switching Behavior.
  • Low Conduction and Switching Loss.
  • High Surge Current Capability.
  • Positive Temperature Coefficient on VF.
  • Fast Reverse Recovery Mechanical Data.
  • Case: Molded plastic, TO-263.
  • Marking: 10A065ND Benefits.
  • High Frequency Operation.
  • Higher System Efficiency.
  • Environmental Protection.
  • Parallel Device Convenience.
  • Hard Switching & High Reliability.
  • High Temperature.

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SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-263  Marking: 10A065ND Benefits  High Frequency Operation  Higher System Efficiency  Environmental Protection  Parallel Device Convenience  Hard Switching & High Reliability  High Temperature Application TO-263 Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.