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PJU1N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
T O- 25 1
TO -2 5 1
G
1
D S3
2
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
INTE RNA L S CHE M ATIC DIA GRA M
2
Drain
ORDERING INFORMATION
TYPE
PJU1N60
1
Gate
MARKING
U1N60
PACKAGE
TO-251
PACKING
3
80PCS/TUBE
S ource
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
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PJU1N60 Datasheet
