PJU1N60 Datasheet | PanJit Semiconductor

600V N-Channel Enhancement Mode MOSFET Features - 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU RoHs 2002/95/EC Directives T O- 25 1 TO -2 5 1 D S3 MECHANICAL DATA - Case: TO-220AB / TO-251 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTE RNA L S CHE M ATIC DIA GRA M Drain ORDERING INFORMATION TYPE Gate MARKING U1N60 PACKAGE TO-251 PACKING 80PCS/TUBE S ource Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )...