PJU1N60 Description
PJU1N60 600V N-Channel Enhancement Mode MOSFET.
PJU1N60 Key Features
- 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / TO-251 Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- PJU1N60
- 4 .0 11 10 +1 0 0
- VDD=300V, I D =1.0A RG=25Ω , V GS =1 0 V
- 190 0 .5
- A A V ns uC