CBD20120LCT
CBD20120LCT is LOW VF SCHOTTKY RECTIFIER manufactured by PanJit Semiconductor.
FEATURES
- Low forward voltage drop, low power losses
- High efficiency operation
- In pliance with EU Ro HS 2002/95/EC directives
0.624(15.87) 0.548(13.93)
120 Volts
CURRENT
20 Amperes
0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15)
MECHANICAL DATA
Case : TO-220AB, Plastic
0.177(4.5) MAX.
Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams.
0.058(1.47) 0.042(1.07) 0.038(0.96) 0.019(0.50)
0.50(12.7)MIN.
0.115(2.92) 0.080(2.03) 0.025(0.65)MAX.
0.100(2.54)
0.100(2.54)
MAXIMUM RATINGS (TA=25o C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load Typical thermal resistance Operating junction temperature range Storage temperature range
.Data Sheet.co.kr
SYMBOL VRRM VRMS
VALUE 120 84 20 10 200 2.0 -55 to + 150 -55 to + 150
UNIT V V A A o per device per diode per diode
I F(AV) I FSM RΘJC TJ TSTG
C/W o
C C o
ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted)
PARAMETER Breakdown voltage per diode
SYMBOL VBR
TEST CONDITIONS I R=1.0m A I F=5A I F=10A I F=5A I F=10A VR=90V TJ=25o C TJ=125o C
MIN. 120
- TYP. 0.62 0.79 0.52 0.62 14 20
MAX. 0.90 0.72 400 50
UNIT V V V μA μA m A
Instantaneous forward voltage per diode
Reverse current per diode
IR VR=120V
TJ=25o C TJ=125o...
