• Part: CBD20150VCT
  • Description: LOW VF SCHOTTKY RECTIFIER
  • Manufacturer: PanJit Semiconductor
  • Size: 111.47 KB
Download CBD20150VCT Datasheet PDF
PanJit Semiconductor
CBD20150VCT
CBD20150VCT is LOW VF SCHOTTKY RECTIFIER manufactured by PanJit Semiconductor.
FEATURES - Low forward voltage drop, low power losses - High efficiency operation - Lead free in ply with EU Ro HS 2002/95/EC directives 0.624(15.87) 0.548(13.93) 150 Volts CURRENT 20 Amperes 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight : 0.0655 ounces, 1.859 grams. 0.038(0.96) 0.019(0.50) MAX. MECHANICAL DATA 0.177(4.5) 0.058(1.47) 0.042(1.07) 0.50(12.7)MIN. 0.115(2.92) 0.080(2.03) 0.025(0.65)MAX. 0.100(2.54) 0.100(2.54) MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage Maximum average forward rectified current Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load Typical thermal resistance Operating junction temperature range Storage temperature range per device per diode per diode ( No te 1 ) .Data Sheet.co.kr SYMBOL VRRM VRMS VR I F(AV) I FSM R ΘJC TJ TSTG VALUE 150 105 150 20 10 200 2.5 -55 to + 150 -55 to + 150 UNIT V V V A A C /W o C C o Note : 1. Mounted on infinite heatsink. ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL V BR TEST CONDITIONS I R=1m A I F=3A I F=5A I F=10A I F=3A I F=5A I F=10A VR=120V Reverse current per diode IR VR=150V TJ=25 C TJ=125o C o MIN. 150 TYP. 0.61 0.68 0.76 0.50 0.56 0.64 6.82 16 MAX. 0.81 100 - UNIT V V TJ=25o C Instantaneous forward voltage per diode TJ=125o C - V μA μA m...