CBD20150VFCT Datasheet | PanJit Semiconductor

FEATURES - Low forward voltage drop, low power losses - High efficiency operation - Lead free in ply with EU Ro HS 2002/95/EC directives 150 Volts CURRENT 20 Amperes 0.100(2.55) 0.112(2.85) 0.272(6.9) 0.134(3.4) 0.118(3.0) 0.248(6.3) 0.406(10.3) 0.381(9.7) 0.189(4.8) 0.165(4.2) 0.130(3.3) 0.114(2.9) 0.606(15.4) 0.583(14.8) 0.543(13.8) 0.177(4.5) Case : ITO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight : 0.055 ounces, 1.5615 grams. 0.137(3.5) MECHANICAL DATA 0.055(1.4) 0.039(1.0) 0.055(1.4) 0.039(1.0) 0.028(0.7) 0.019(0.5) 0.100(2.55) 0.512(13.0) 0.114(2.9) 0.098(2.5) 0.100(2.55) 0.027(0.67) 0.022(0.57) MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage Maximum average forward rectified current Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load Typical thermal resistance Operating junction temperature range Storage temperature range per device per diode per diode ( No te 1 ) .Data Sheet.net/ SYMBOL VRRM VRMS VR I F(AV) I FSM R ΘJC TJ TSTG VALUE 150 105 150 20 10 200 15 -55 to + 150 -55 to + 150 UNIT V V V A A C /W o C C o Note : 1. Mounted on infinite heatsink. ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL V BR TEST CONDITIONS I R=1m A I F=3A I F=5A I F=10A I F=3A I F=5A I F=10A VR=120V Reverse current per diode IR VR=150V TJ=25o C TJ=125o C TJ=25o C MIN. 150 TYP. 0.61 0.68 0.76 0.50 0.56 0.64 7 16 MAX. 0.81 100 UNIT V V Instantaneous forward voltage per diode TJ=125o C V μA μA m A September 5,2012-REV.00 PAGE . 1 Datasheet pdf - http://..co.kr/...