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PJP75N75
75V N-Channel Enhancement Mode MOSFET
FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ
• Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA • Case: TO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : P75N75
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol Limit
Drain-Source Voltage
VDS 75
Gate-Source Voltage
VGS +20
Continuous Drain Current
ID 7 5
Pulsed Drain Current 1)
ID M
Maximum Power Dissipation
TA =25OC TA =75OC
PD
Op e ra ti ng J unc ti o n a nd S t
P75N75 Datasheet
