PJA45N02 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@1.8V,ID@1.5A<87m - RDS(ON), VGS@4.5V,ID@3.6A<40m - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Low Gate Charge - ILead free in ply with EU Ro HS 2002/95/EC directives. - Green molding pound as per IEC61249 Std. . (Halogen Free) 0.079(2.00) 0.070(1.80) 0.008(0.20) 0.003(0.08) 0.056(1.40) 0.047(1.20) 0.120(3.04) 0.110(2.80) 20 Volts CURRENT 3.6 Amperes 0.006(0.15)MIN. 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) MECHANICAL DATA - Case: SOT-23 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Apporx. Weight : 0.0003 ounces, 0.0084grams - Marking : 45 0.004(0.10) 0.000(0.00) http://..net/ MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o urc e Vo lt a g e Ga t e -S o ur c e Vo lt a g e C o nt i nuo us D ra i n C urr e nt ( No te s 1 ) P uls e d D ra i n C urr e nt ( No te s 1 ) P o we r D i s s i p a t i o n (N o t e s 1 ) Typ i c a l The r ma l Re s i s t a nc e (No t e s 1 ) Op e ra t i ng J unc ti o n a nd S t o r a g e Te mp e ra t ur e Ra ng e S t e a d y- S ta t e S t e a d y- S ta t e TA= 2 5 OC TA= 7 0 OC S t e a d y- S ta t e S t e a d y- S ta t e TA= 2 5 OC TA= 7 0 OC S YM B OL V DS V GS ID ID M PD R J A T J , T S TG L IMIT 20 +8 2 .9 2 .3 10 700 400 178 -5 5 to + 1 5 0 UNITS V V A A m W C /W NOTES: 1. Mounted on minimum pad layout. 2. Mounted on 48cm2 FR-4PCB. March 28,2013-REV.00 PAGE . 1 datasheet pdf - http://..net/ ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted ) PA RA M E TE R S ta ti c D ra i n- S o urc e B re a k d o wn Vo lta g e Ga te Thr e s ho ld Vo lta g e B V DSS V GS (th) V GS = 0 V, I D =2 5 0  A V D S =V GS , I D = 2 5 0  A VGS= 4.5V, I D= 3.6A VGS= 2.5V, I D= 3.1A VGS= 1.8V, I D= 1.5A VGS= 1.5V, I D= 1.0A Ze ro G a te Vo lta g e D r a i n C urr e nt Gate -Source Leakage Current Dynamic Forward Transconductance...