PJA63P02 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@-1.8V,ID@-2.3A<108 mΩ - RDS(ON), VGS@-4.5V,ID@-3.3A<63 mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Low Gate Charge - Lead free in ply with EU Ro HS 2002/95/EC directives. - Green molding pound as per IEC61249 Std. . (Halogen Free) 20 Volts CURRENT 2.9 Amperes MECHANICAL DATA - Case: SOT-23 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Apporx. Weight : 0.0003 ounces, 0.0084grams - Marking : 63 .Data Sheet.net/ MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA=25OC unless otherwise noted ) PAR AME T E R D r a i n- S o ur c e Vo lta g e Ga te - S o ur c e Vo lta g e C o nti nuo us D ra i n C urr e nt P uls e d D r a i n C urr e nt P o we r D i s s i p a ti o n ( No te s 1 ) Typ i c a l The r ma l Re s i s ta nc e (No te s 1 ) Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra tur e Ra ng e S te a d y- S ta te T A =2 5 O C S te a d y- S ta te T A =2 5 O C S YMB OL V DS V GS ID ID M PD R θJA T J ,T S TG L IMIT -20 +1 2 - 2 .9 -12 0 .8 155 - 5 5 to + 1 5 0 U N IT S V V A A W C /W NOTES: 1. Mounted on 7.5cm FR-4 PCB . November 04,2011-REV.00 PAGE . 1 Datasheet pdf - http://..co.kr/ ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted ) PAR AME T E R S ta ti c D ra i n-S o urc e B re a kd o wn Vo lta g e Ga te Thre sho ld Vo lta g e B V DSS V GS (th) V GS = 0 V, ID =-2 5 0 μ A V D S =V GS , ID =-2 5 0 μ A VGS= -4.5V, I D= -3.3A D ra i n-S o urc e On-S ta te Re s i s ta nc e R D S (on) VGS= -2.5V, I D= -2.8A VGS= -1.8V, I D= -2.3A Ze ro Ga te Vo lta g e D ra i n C urre nt Gate -Source Leakage Current D i o d e F o rwa rd Vo lta g e Dynamic w w w . D a t a S h e e t . n e t / S YMB OL T E S T C ON D IT...