PJA87P03 Datasheet | PanJit Semiconductor

Features - - - - - - - - 30 V Current 4A RDS(ON), VGS@-4.5V,ID@-3A<87 mΩ RDS(ON), VGS@-10V,ID@-4.1A<55 mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Low Gate Charge Lead free in ply with EU Ro HS 2002/95/EC directives. Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - - - - Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Apporx. Weight: 0.0003 ounces, 0.0084 grams Marking:87 .Data Sheet.net/ Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note 1) o SYMBOL VDS VGS Ta=25o C Ta=70 C o LIMIT UNITS V V A A W o -30 +20 -4 -3.5 20 1.19 0.75 -55 to +150 125 o ID IDM (Note 1) T a=25 C T a=70 C o o PD TJ,TSTG R θJA Operating Junction and Storage Temperature Range Thermal resistance Junction to Ambient (Note 1) C/W August 31,2012-REV.00 Page 1 Datasheet pdf - http://..co.kr/ PPJA87P03 Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time NOTES: 2 1. Mounted on 1 in FR-4 PCB. o SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS VSD Qg Qgs Qgd Ciss Coss Crss td(on) td(off) tr tf TEST CONDITION VGS=0V,ID=-250u A VDS=VGS,ID=-250u A VGS=-10V,ID=-4.1A VGS=-4.5V,ID=-3A VDS=-30V,VGS=0V VGS=+20V,VDS=0V IS=-1A,VGS=0V MIN. -30...