PJU1N60 Datasheet | PanJit Semiconductor

FEATURES - 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU Ro Hs 2002/95/EC Directives T O- 25 1 TO -2 5 1 D S3 MECHANICAL DATA - Case: TO-220AB / TO-251 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTE RNA L S CHE M ATIC DIA GRA M Drain ORDERING INFORMATION TYPE Gate MARKING U1N60 PACKAGE TO-251 PACKING 80PCS/TUBE S ource Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) http://..net/ PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J U1 N6 0 600 +3 0 1 4 .6 28 0 .2 2 -5 5 to +1 5 0 58 4 .5 100 Uni ts V V A A W Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse IAS=1.1A, VDD=50V, L=95m H m J Junction-to-Case Thermal Resistance Junction-to Ambient Thermal...