PJUSB05-4
PJUSB05-4 is MOSFET manufactured by PanJit Semiconductor.
FEATURES
- SOT23-6L package allows five separate unidirectional configurations
- Low leakage < 1 µ A@5V
- Breakdown voltage : 6.37V-7.04V@1m A
- Low Capacitance (8.5p F typical)
- ESD Protection Meeting IEC1000-4-2
- In pliance with EU Ro HS 2002/95/EC directives
MECHANICAL DATA
Case : SOT23-6L, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.013 gram Marking : BTW
MAXIMUM RATINGS http://..net/
Rating Peak Power Dissipation @20µs@TA<25 o C (Note 1) Steady State Power-1 Diode (Note 2) Thermal Resistance , Junction to Ambient Above 25o C, Derate ESD Discharge MIL STD 883C-Method 3015-6 IEC1000-4-2, Air Discharge IEC1000-4-2, Contact Discharge Lead Solder Temperature (10 s duration) Operating Junction and Storage Temperature Range
Symbol PTOT PD RθJA
Value 150 385 212 4.7 16 15 8 260 -55 to 150
Unit W m W
O C/W m W/OC
VPP k V
TL TJ,TSTG
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneuosly.If these limits are exceeded,device functional operation is not implied,damage may occur and reliability may be affected. 1.Non-repetitive current per Figure 1.Derate per Figure 2. 2.Only 1 diode under power.For all 5 diodes under power,P D will be 20%.Mounted on FR-4 board with min pad.
STAD-DEC.6.2007
PAGE . 1 datasheet pdf
- http://..net/
ELECTRICAL CHARACTERISTICS
B r e a k d o w n Vo lt a g e V B R @ 1 m A(V o lts ) Part Number Min . V PJUSB05-4 6.37 Nom V 6.7 Ma x . V 7.04 µA 1.0 p F 8.5 V 0.95
Leakage Current IR @ VRWM = 5V
Capacitance@0V Bias
Max VF@IF=10m A http://..net/
1.7...