SBM3045VCT Datasheet | PanJit Semiconductor

FEATURES - Ultra Low forward voltage drop, low power losses - High efficiency operation - Lead free in ply with EU Ro HS 2011/65/EU directives 45 Volts CURRENT 30 Amperes MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.065 ounces, 1.859 grams. MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER http://../ SYMBOL VRRM per diode per device per diode I F(AV) I FSM CJ (Note 1) RJC TJ TSTG VALUE 45 30 15 300 1100 2 -55 to + 150 -55 to + 150 UNIT V A A p F o Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load Typical junction capacitance (V R=4V, f=1MHz) Typical thermal resistance per diode Operating junction temperature range Storage temperature range C/W o C C o Note : 1. Mounted on infinite heatsink. ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL VBR TEST CONDITIONS I R=0.5m A I F=1A I F=5A I F=15A I F=1A I F=5A I F=15A VR=36V Reverse current per diode IR VR=45V TJ=25o C MIN. 45 TYP. 0.28 0.35 0.44 0.17 0.27 0.4 86 20 28 MAX. 0.48 320 UNIT V V Instantaneous forward voltage per diode TJ=125o C TJ=25o C TJ=125o C TJ=25o C TJ=125o C V A m A A m A June 6,2013-REV.00 PAGE . 1 CJ, Junction Capacitance (p F) IF, Forward Current (A) 5 Per Diode 0 0 25 50 75 100 125 150 10 Per Diode 1 1 10 100 TC, Case Temperature (°C) VR, Reverse Bias Voltage (V) Fig.1 Forward Current Derating Curve 100...