SBM3060VCT Datasheet | PanJit Semiconductor

FEATURES - Ultra Low forward voltage drop, low power losses - High efficiency operation - Lead free in ply with EU Ro HS 2011/65/EU directives 60 Volts CURRENT 30 Amperes MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.065 ounces, 1.859 grams. MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load Typical junction capacitance (V R=4V, f=1MHz) Typical thermal resistance per diode Operating junction temperature range Storage temperature range (Note 1) http://../ SYMBOL VRRM I F(AV) I FSM CJ RJC TJ TSTG VALUE 60 15 30 250 650 2 -55 to + 150 -55 to + 150 UNIT V A A p F o per diode per device per diode C/W o C C o Note : 1. Mounted on infinite heatsink. ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL VBR TEST CONDITIONS I R=0.5m A I F=3A I F=5A I F=15A I F=3A I F=5A I F=15A VR=42V Reverse current per diode IR VR=60V TJ=25o C TJ=125o C TJ=25o C MIN. 60 TYP. 0.36 0.40 0.55 0.29 0.35 0.57 30 16 MAX. 0.59 220 UNIT V V Instantaneous forward voltage per diode TJ=125o C V A A m A May 16,2013-REV.00 PAGE . 1 CJ, Junction Capacitance (p F) IF, Forward Current (A) 0 0 25 50 75 100 125 150 1 1 10 100 TC, Case Temperature (°C) VR, Reverse Bias Voltage (V) Fig.1 Forward Current Derating...