2SB1427W6
2SB1427W6 is PNP Transistor manufactured by PanJit Semiconductor.
Features
- Silicon PNP epitaxial type
- Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53m A
- High collector current capability
- Excellent DC current gain characteristics
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: SOT-23 6L-1 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0005 ounces, 0.014 grams
- Marking: B27
SOT-23 6L-1
Unit: inch(mm)
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Power Dissipation Operating Junction and Storage Temperature Range Typical Thermal Resistance from Junction to Ambient (Note )
Note: Mounted on FR4 PCB at 1 inch square copper pad.
February 25,2015-REV.03
SYMBOL VCBO VCEO VEBO IC ICP IB PD
TJ,TSTG RθJA
LIMIT -20 -20 -7 -3 -5 -0.3 1.2
-55~150 104
UNITS V V V A A A W o C o C/W
Page 1
P2SB1427W6
Electrical
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON characteristics
DC Current Gain (Note1)
Collector-Emitter Saturation Voltage (Note1) Base-Emitter Saturation voltage (Note1) Transition Frequency
Collector Output Capacitance
SYMBOL TEST CONDITION
BVCEO BVCBO BVEBO
ICBO...
