2SC2222H
2SC2222H is NPN General Purpose Switching Transistor manufactured by PanJit Semiconductor.
Features
- NPN epitaxial Silicon, Planar Design
- Collector-emitter voltage VCE = 40V
- Collector current = 600m A
- Lead free in ply with EU Ro HS 2011/65/EU directives.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: SOT-89 Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.002 ounces, 0.057grams
- Marking: C2H
Pin Assignment: 1. Base 2. Collector 3. Emitter
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction to Ambient (Note1) Operating Junction and Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP PTOT RθJA
TJ,TSTG
Note1: Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
LIMIT 75 40 6 600 800 1.1 250
-55~150
UNITS V V V m A m A W o C/ W o C
October 12,2015-REV.00
Page 1
P2SC2222H
Electrical
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Cutoff Current ON characteristics
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation voltage Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time Fall Time Turn-on Time Turn-off Time Transition Frequency
SYMBOL TEST CONDITION
BVCEO BVCBO BVEBO
ICBO IEBO ICES
IC= 1.0m A, IB= 0A IC= 10u A, IE= 0A IE= 10u A, IC= 0A VCB= 60V, IE= 0A VEB= 3V VCES= 60V h...
