BAS100ATB6
BAS100ATB6 is SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES manufactured by PanJit Semiconductor.
FEATURES
- Smallest 100V Dual, isolated Schottky diode currently available
- Lead free in ply with EU Ro HS 2011/65/EU directives
- Green molding pound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
- Case: SOT-563, Plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
- Apporx. Weight: 0.0001 ounces, 0.0026 grams
- Marking: BW
ABSOLUTE MAXIMUM RATINGS (TA=25OC unless otherwise noted)
PARAMETER
S YMB OL
Maxi mum Recurrent Peak Reverse Voltage
V RRM
Maxi mum RMS Voltage
V RMS
Maxi mum D C Blocking Voltage
Maxi mum Average Forward Rectifi ed C urrent
IF (AV )
Maxi mum Forward Rectifi ed C urrent @ t=10s
Peak Forward Surge C urrent : 8.3ms si ngle half sine-wave superimposed on rated load (JEDEC method) Peak Forward Surge Current : 10ms single half sine-wave superimposed on rated load (JEDEC method)
Typ i c a l J unc ti o n C a p a c i ta nc e ( V R= 4 V, f = 1 M Hz)
IF (AV ) IFSM IFSM CJ
Typ i c a l The rm a l Re s i s ta nc e , J unc ti o n to A mb i e nt ( No te 1 )
RJA
Op e ra t i ng J unc ti o n Te mp e r a tur e a nd S to r a g e Te m p e ra t ure R a ng e TJ, TSTG
NOTE : 1. Mounted on an FR4 PCB, single-sided copper, mini pad. February 27,2013-REV.01
VALUE 100 70 100 0.4 0.5 5.5 5 21 480
-55 to +150
UNITS V V V A A A A p F
OC / W OC
PAGE . 1
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
PARAMETER Breakdown Voltage Instantaneous Forward Voltage
Reverse Current
SYMBOL
Test Condition
VBR I R=200A
I F=0.4A I F=0.5A VF I F=0.4A I...