• Part: BAS100ATB6
  • Description: SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
  • Category: Diode
  • Manufacturer: PanJit Semiconductor
  • Size: 128.72 KB
Download BAS100ATB6 Datasheet PDF
PanJit Semiconductor
BAS100ATB6
BAS100ATB6 is SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES manufactured by PanJit Semiconductor.
FEATURES - Smallest 100V Dual, isolated Schottky diode currently available - Lead free in ply with EU Ro HS 2011/65/EU directives - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA - Case: SOT-563, Plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Apporx. Weight: 0.0001 ounces, 0.0026 grams - Marking: BW ABSOLUTE MAXIMUM RATINGS (TA=25OC unless otherwise noted) PARAMETER S YMB OL Maxi mum Recurrent Peak Reverse Voltage V RRM Maxi mum RMS Voltage V RMS Maxi mum D C Blocking Voltage Maxi mum Average Forward Rectifi ed C urrent IF (AV ) Maxi mum Forward Rectifi ed C urrent @ t=10s Peak Forward Surge C urrent : 8.3ms si ngle half sine-wave superimposed on rated load (JEDEC method) Peak Forward Surge Current : 10ms single half sine-wave superimposed on rated load (JEDEC method) Typ i c a l J unc ti o n C a p a c i ta nc e ( V R= 4 V, f = 1 M Hz) IF (AV ) IFSM IFSM CJ Typ i c a l The rm a l Re s i s ta nc e , J unc ti o n to A mb i e nt ( No te 1 ) RJA Op e ra t i ng J unc ti o n Te mp e r a tur e a nd S to r a g e Te m p e ra t ure R a ng e TJ, TSTG NOTE : 1. Mounted on an FR4 PCB, single-sided copper, mini pad. February 27,2013-REV.01 VALUE 100 70 100 0.4 0.5 5.5 5 21 480 -55 to +150 UNITS V V V A A A A p F OC / W OC PAGE . 1 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) PARAMETER Breakdown Voltage Instantaneous Forward Voltage Reverse Current SYMBOL Test Condition VBR I R=200A I F=0.4A I F=0.5A VF I F=0.4A I...