Download BAS116WS Datasheet PDF
PanJit Semiconductor
BAS116WS
BAS116WS is LOW LEAKAGE SWITCHING DIODE manufactured by PanJit Semiconductor.
FEATURES - Suface mount package ideally suited for automatic insertion. - Very low leakage current. 2p A typical at VR=75V. - Low capacitance. 2p F max at VR=0V, f=1MHz - In pliance with EU Ro HS 2002/95/EC directives MECHANICAL DATA - Case: SOD-323 plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx weight: 0.00014 gram - Marking: PA .054(1.35) .045(1.15) .078(1.95) .068(1.75) Unit: inch (mm) .014(.35) .009(.25) .038(.95) .027(.70) .006(.15) .002(.05) .107(2.7) .090(2.3) .012(.30)MIN. ABSOLUTE RATINGS (each diode) Reverse Voltage PA RA ME TE R Peak Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current at t=1.0us S ym b o l VR V RM IF I FSM THERMAL CHARACTERISTICS PA RA ME TE R Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e S ym b o l P TOT RθJA TJ TSTG NOTE: 1. FR-5 Board = 1.0 x 0.75 x 0.062 in. Value 75 100 0.2 2.0 Value 200 625 -55 to 150 -55 to 150 Uni ts V V A A Uni ts m W O C /W OC OC STAD-SEP.07.2007 PAGE . 1 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PARAMETER Reverse Breakdown Voltage Reverse Current Forward...