BAS116WS
BAS116WS is LOW LEAKAGE SWITCHING DIODE manufactured by PanJit Semiconductor.
FEATURES
- Suface mount package ideally suited for automatic insertion.
- Very low leakage current. 2p A typical at VR=75V.
- Low capacitance. 2p F max at VR=0V, f=1MHz
- In pliance with EU Ro HS 2002/95/EC directives
MECHANICAL DATA
- Case: SOD-323 plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx weight: 0.00014 gram
- Marking: PA
.054(1.35) .045(1.15)
.078(1.95) .068(1.75)
Unit: inch (mm)
.014(.35) .009(.25)
.038(.95) .027(.70)
.006(.15) .002(.05)
.107(2.7) .090(2.3)
.012(.30)MIN.
ABSOLUTE RATINGS (each diode)
Reverse Voltage
PA RA ME TE R
Peak Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Surge Current at t=1.0us
S ym b o l VR V RM IF
I FSM
THERMAL CHARACTERISTICS
PA RA ME TE R Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e
S ym b o l P TOT RθJA TJ TSTG
NOTE: 1. FR-5 Board = 1.0 x 0.75 x 0.062 in.
Value 75 100 0.2 2.0
Value 200 625
-55 to 150 -55 to 150
Uni ts V V A A
Uni ts m W O C /W OC OC
STAD-SEP.07.2007
PAGE . 1
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
PARAMETER Reverse Breakdown Voltage Reverse Current
Forward...