BC817-25W-AU Datasheet | PanJit Semiconductor

FEATURES - General purpose amplifier applications - NPN epitaxial silicon, planar design - Collector current IC = 500m A - Acqire quality system certificate : TS16949 - AEC-Q101 qualified - Lead free in ply with EU Ro HS 2011/65/EU directives - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA - Case : SOT-323, Plastic - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.001 ounce, 0.005 gram - Device Marking : BC817-16W-AU : 8S BC817-25W-AU : 8V BC817-40W-AU : 8W MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation ( NOT E ) Junction and Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PTOT TJ , TSTG THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction to Ambient ( NOTE ) SYMBOL R JA NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions. March 15,2011-REV.02 Value 45 50 5.0 500 300 -55 to +150 Value 420 UNIT V V V m A m W o C UNIT o C / W PAGE . 1 BC817-16W-AU SERIES ELECTRICAL CHARACTERISTICS ( TJ=25o C,unless otherwise notes ) PARAMETER Collector-Emitter Breakdown Voltage ( Ic=10m A, IB=0 ) Collector-Base Breakdown Voltage ( VEB=0V, Ic=10A ) Emitter-Base Breakdown Voltage ( IE=1A, Ic=0 ) Emitter-Base Cutoff Current ( VEB =5V ) Collector-Base Cutoff Current ( VCB=20V, IE=0 ) TJ =25o C TJ =150o C DC Current Gain ( Ic=100m A, VCE=1V ) BC817-16W-AU BC817-25W-AU BC817-40W-AU DC Current Gain ( Ic=500m A, VCE=1V ) Collector-Emitter Saturation Voltage ( Ic=500m A, IB=50m A...