BZQ53xxB Datasheet | PanJit Semiconductor

FEATURES .. - Planar Die construction - 500m W Power Dissipation (1 .0 67 .7 ) - Ideally Suited for Automated Assembly Processes MECHANICAL DATA - Case: Molded Glass QUADRO-MELF - Terminals: Solderable per MIL-STD-202E, Method 208 - Polarity: See Diagram Below - Approx. Weight: 0.03 grams - Mounting Position: Any - Packing information T/R - 2.5K per 7" plastic Reel .020(0.5) .012(0.3) .146(3.7) .130(3.3) .020(0.5) .012(0.3) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Power Dissipation at Tamb = 25 Junction Temperature Storage Temperature Range Symbol Value 500 175 -65 to +175 Units m W PTOT TJ TS Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. Parameter Thermal Resi stance Juncti on to Ambi ent Ai r Forward Voltage at IF = 100m A Symbol Min. --- Typ. Max. 0.3 1 Uni ts K/m W V Rth A VF --- Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature. STAD-JAN.27.2004 .063(1.6) .055(1.4)DIA. PAGE . 1 Nomi nal Zener Voltage Part...