CBD40120LCT Datasheet | PanJit Semiconductor

FEATURES - Low forward voltage drop, low power losses 0.624(15.87) 120 Volts CURRENT 40 Amperes 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) - High efficiency operation - In pliance with EU Ro HS 2002/95/EC directives Terminals : Solderable per MIL-STD-750, Method 2026 0.038(0.96) 0.019(0.50) MAX. Case : TO-220AB, Plastic 0.177(4.5) 0.058(1.47) 0.042(1.07) 0.50(12.7)MIN. MECHANICAL DATA 0.548(13.93) 0.115(2.92) 0.080(2.03) 0.025(0.65)MAX. PRELIMINARY Weight: 0.0655 ounces, 1.859 grams. 0.100(2.54) 0.100(2.54) MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage Maximum average forward rectified current Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load Typical thermal resistance Operating junction temperature range Storage temperature range per device per diode per diode ( No te 1 ) SYMBOL VRRM VRMS VR I F(AV) I FSM R ΘJC TJ TSTG VALUE 120 85 120 40 20 250 2.5 -55 to + 150 -55 to + 150 UNIT V V V A A C /W o C C o Note : 1. Mounted on infinite heatsink. ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL V BR TEST CONDITIONS I R=1m A I F=5A I F=10A I F=20A I F=5A I F=10A I F=20A VR=96V Reverse current per diode IR VR=120V TJ=25 C TJ=125o C o MIN. 120 TYP. 0.59 0.7 0.8 0.49 0.57 0.67 6.31 9 MAX. 0.85 50 - UNIT V V TJ=25o C Instantaneous forward voltage per diode TJ=125o C - V μA μA m A December...