• Part: ER2002ST
  • Description: ISOLATION SUPERFAST RECOVERY RECTIFIER
  • Manufacturer: PanJit Semiconductor
  • Size: 116.60 KB
Download ER2002ST Datasheet PDF
PanJit Semiconductor
ER2002ST
ER2002ST is ISOLATION SUPERFAST RECOVERY RECTIFIER manufactured by PanJit Semiconductor.
FEATURES - Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding pound. 0.732(18.58) 0.715(18.18) 200 Volts CURRENT 20 Amperes 0.615(15.60)MAX. 0.520(13.20) 0.504(12.80) 0.402(10.20) 0.385(9.80) 0.185(4.70) 0.169(4.30) - Low power loss, high efficiency. - Low forward voltage, high current capability - High surge capacity. - Super fast recovery times, high voltage. - Epitaxial chip construction. - Lead free in ply with EU Ro HS 2002/95/EC directives 0.516(13.20) 0.504(12.80) 0.118(3.0) MIN. 0.599(15.20) 0.582(14.80) 0.577(14.65) 0.565(14.35) 0.776(19.70) 0.759(19.30) - Exceeds environmental standards of MIL-S-19500/228 0.071(1.80) 0.055(1.40) 0.095(2.40) 0.078(2.00) 0.050(1.25) 0.037(0.95) 0.166(4.20) 0.149(3.80) 0.579(14.70) 0.563(14.30) 0.103(2.60) 0.090(2.30) MECHANICAL DATA - Case: TO-3PS Molded plastic - Terminals: Lead solderable per MIL-STD-750, Method 2026 - Polarity: As marked. - Standard packaging: Any - Weight: 0.1932 ounces, 5.48 grams. 0.223(5.65) 0.206(5.25) 0.223(5.65) 0.206(5.25) 0.025(0.62) 0.014(0.38) MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. .Data Sheet.net/ For capacitive load, derate current by 20% PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Peak Forward Surge Current : 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Forward Voltage at 10A Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 2) Operating Junction and Storage Temperature Range per diode per device per diode per diode per diode per diode SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR VALUE 200 140 200 20 10 150 1 10 25 2 -55 to +150 UNITS V V V A A V μA ns O...