MBR580 Datasheet | PanJit Semiconductor

FEATURES - Epitaxial Construction - Guard Ring Die Construction for Transient Protection - Low Power Loss, High Efficiency - High Surge Capability - High Current Capability and Low Forward Voltage Drop - Surge Overload Rating to 150A Peak - For Use in Low Voltage,High Frequency Inverters ,Free Wheeling , and Polarity Protection Applications . - In pliance with EU Ro HS 2002/95/EC directives 0.375(9.5) 0.285(7.2) 1.0(25.4)MIN. 0.052(1.3) 0.048(1.2) 40 to 200 Volts CURRENT 5 Amperes - Case: DO-201AD Molded plastic - Terminals: Axial leads, solderable per MIL-STD-750,Method 2026 - Polarity: Color band denotes cathode - Mounting Position: Any - Weight: 0.0395 ounces, 1.122 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. PA RA ME TE R Ma xi mum Re c ur re nt P e a k Re ve r se Vo ltag e Ma xi mum RMS Vo lta g e Ma xi mum D C B lo c ki ng Vo lta g e A ve ra g e Re cti fi e d Outp ut C ur re nt (S e e F i g ur e 1 ) Non-Rep e ti ti ve P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ngle ha lf s i ne - wa ve s up e ri mpo s e d o n ra te d lo a d F o rwa rd Vo lta g e a t 5 .0 A (No te s 3 ) P ea k Re ve rs e C ur re nt a t Ra te d D C B lo ck i ng Vo lta g e Typ i ca l The rma l Re s i sta nc e (No te s 2 ) ( No te s 1 ) ( No te s 1 ) Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e r ature Ra ng e T J =2 5 O C T J =1 0 0 O C S YMB OL V RR M V RMS V DC I F (AV ) IF S M VF IR R θJ A R θJ L R θ JC T J ,T S TG 1.0(25.4)MIN. MECHANICAL DATA 0.210(5.3) 0.188(4.8) M B R54 0 MB R5 4 5 M B R55 0 MB R5 60 MB R5 8 0 MB R5 90 MB R5 1 00 MB R5 1 5 0 M B R5 2 0 0 UNITS V V V A A 40 28 40 45 3 1 .5 45 50 35 50 60 42 60 80 56 80 5 .0 150 90 63 90 1 00 70 1 00 150 105 150 200 1 40 200 0 .7 0 0 .7 4 0 .0 5 10 50 15...