MMBT3904FN3 Datasheet | PanJit Semiconductor

FEATURES 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.021(0.55) - NPN epitaxial silicon, planar design - Collector-emitter voltage VCE = 40V - Collector current IC = 200m A - In pliance with EU Ro HS 2002/95/EC directives Unit : inch(mm) 0.022(0.55) 0.047(0.45) MECHANICAL DATA Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Marking: AC 0.002(0.05) MAX. 0.013(0.32) 0.008(0.22) 0.014(0.36) 0.013(0.32) 0.008(0.22) 0.022(0.55) 0.047(0.45) 0.014(0.20) 0.008(0.20) 0.004(0.10) 0.008(0.20) 0.004(0.10) 2 3 ABSOLUTE RATINGS Collector - E mitter Voltage Parameter Collector - B ase Voltage Emitter - B ase Voltage Collector Current - C ontinuous THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient J unc ti o n Te m p e r a tur e Op e r a ti ng Te m p e r a tur e Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Units V V V m A Symbol PTOT RJA TJ TS TG Value 250 500 -55 to +150 -55 to +150 Units m W OC/W OC OC Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.2-JUL.18.2009 PAGE . 1 ELECTRICAL CHARACTERISTICS...