MMBT3904W Datasheet | PanJit Semiconductor

FEATURES - NPN epitaxial silicon, planar design - Collector-emitter voltage VCE = 40V - Collector current IC = 200m A - Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1.15) .004(.10)MIN. .087(2.2) .078(2.0) Unit: inch (mm) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram Marking: S1A Top View 3 Collector 1 BASE 3 COLLECTOR .056(1.40) .047(1.20) .004(.10)MAX. .006(.15) .002(.05) .016(.40) .078(.20) .044(1.1) .035(0.9) 1 Base 2 Emitter ABSOLUTE RATINGS PARAM ETER C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage C ollector C urrent-C ontinuous 2 EMITTER Sym bol VCEO VCBO VEBO IC Value 40 60 6.0 200 U nits V V V m A THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TISTG Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-JUL.06.2004 Value 150 833 -55 to 150 -55 to 150 Units m W O C/W OC OC PAGE . 1 ELECTRICAL CHARACTERISTICS...