MMBT3906FN3 Datasheet | PanJit Semiconductor

FEATURES 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) - PNP epitaxial silicon, planar design - Collector-emitter voltage VCE = -40V - Collector current IC = -200m A - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. . (Halogen Free) 0.002(0.05)MAX. 0.022(0.55) 0.017(0.45) MECHANICAL DATA Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx weight: 0.00004 ounce, 0.0011 gram Marking: AD 2 1 0.022(0.55) 0.017(0.45) 0.014(0.36) 0.008(0.20) 0.004(0.10) 0.013(0.32) 0.009(0.22) 0.014(0.36) 0.013(0.32) 0.009(0.22) 0.008(0.20) 0.004(0.10) ABSOLUTE RATINGS Collector - Emitter Voltage Parameter Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5 -200 Units V V V m A THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient J unc ti o n Te m p e r a tur e S to r a g e Te m p e r a tur e Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. March 30,2015-REV.03 Symbol PTOT RθJA TJ T S...