P6SMB4x Datasheet | PanJit Semiconductor

FEATURES - For surface mounted applications in order to optimize board space. - Low profile package - Built-in strain relief - Glass passivated junction - Low inductance .. - Typical ID less than 1.0µA above 10V - Plastic package has Underwriters Laboratory Fammability Classification 94V-O - High temperature soldering : 260°C /10 seconds at terminals - In pliance with EU Ro HS 2002/95/EC directives .155(3.94) .130(3.30) .083(2.11) .075(1.91) .185(4.70) .160(4.06) .012(.305) .006(.152) .096(2.44) .083(2.13) MECHANICAL DATA - - - - - Case: JEDEC DO-214AA ,Molded plastic over passivated junction Terminals: Solder plated,solderable per MIL-STD-750,Method 2026 Polarity: Color band denotes positive end (cathode) Standard Packaging:12mm tape (EIA-481) Weight: 0.003 ounce, 0.093 gram .050(1.27) .030(0.76) .008(.203) .002(.051) .220(5.59) .200(5.08) DEVICES FOR BIPOLAR APPLICATIONS For Bidirectional use C or CA Suffix for types Electrical characteristics apply in both directions. MAXIMUM RATINGS AND CHARACTERISTICS Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz. For Capacitive load derate current by 20%. R ating Peak Pulse Power D i ssi pati on on 10/1000u S waveform (Notes 1,2, Fi g.1) Peak Forward Surge C urrent 8.3ms si ngle half si ne-wave superi mposed on rated load (JED EC Method) (Notes 2,3) Peak Pulse C urrent on 10/1000us waveform(Note 1)Fi g.3 Operati ng Juncti on and Storage Temperature Range Symbol P PPM IFSM IPPM TJ,TSTG Value 600 100 see Table 1 -55 to +150 Uni ts Watts Amps Amps NOTES: 1. Non-repetitive current pulse, per Fig.3 and derated above T A = 25 O C per Fig. 2. 2. Mounted on 5.0mm 2 (0.13mm thick) land areas. 3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. STAD-MAY.25.2007 PAGE . 1 P6SMB SERIES Part N umber UNI BI V R WM Min . V V V BR @ IT Ma x . V IT m A IR @ VRWM U N IµA B IµA V A UNI BI VC @ IPP Marki ng C ode 600W...