PJ04N03D Datasheet | PanJit Semiconductor

FEATURES - RDS(ON),VGS@10V,I DS@30A=4mΩ - RDS(ON),VGS@5.0V,I DS@24A=6mΩ - Advanced trench process technology - High Density Cell Design For Uitra Low On-Resistance - Specially Designed for DC/DC Converters and Motor Drivers - Fully Characterized Avalanche Voltage and Current - In pliance with EU Ro HS 2002/95/EC directives G S D TO-252 MECHANICALDATA - Case : TO-252 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : 04N03D G D Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1m H,I D=53A,VDD=25V Power Dissipation TC=25o C TC=75o C TC=25o C Symbol VDS VGS ID I DM E AS PD TJ,TSTG RΘJC RΘJA Limits 25 +20 80 220 140 100 66 -55 to +175 1.5 Units V V A A m J Operating Junction and Stroage Temperature Range Junction-to-Case Junction-to-Ambient .. NOTE : Pulse width limited by maximum junction temperature o C o C/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 10,2009-REV.00 PAGE . 1 ELECTRICAL CHARACTERISTICS (TA=25o C,Unless Otherwise Noted) PA RA ME TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MA X . U N IT S TA T IC D ra i n-S o urc e B re a k d o wn Vo lta g e Ga te Thre s ho ld Vo lta g e D r a i n - S o u r c e O n- s t a t e Re s i s t a nc e Ga te -B o dy L e ak a ge Ze r o Ga te Vo lta g e D ra i n C urre nt O n - S t a t e D r a i n C ur r e nt F o r w a r d Tr a ns c o n d uc t a nc e I V (B R)D S S V GS (TH) V GS= 0 V, I V D S = V GS, I D=2 50µA D=250µA D=3 0A D=2 4 A 25 1 65 15 3 .6 4 .8 - 3 4 .0 6 .0 +100 1 25 - V V mΩ mΩ n A µA µA A S V GS = 1 0 V,...