PJ3L85 Datasheet | PanJit Semiconductor

FEATURES Very Low Reverse Leakage Current Fast Switching Ultra Small SOT-363 Package Utilizing Minimal Board Space Lead Free Plating, 100% Matte Tin Finish, Ro HS pliant MIL-883 HBM+/- 8KV,IEC-61000-4-2 LEVEL 4 APPLICATIONS PDAs Portable puters MAXIMUM RATINGS TA = 25°C, unless otherwise noted Rating Marking Code Reverse Voltage Continuous Forward Current Non-Repetitive Surge Current, t=1s Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range VR IF I FSM PD TJ TSTG Symbol Value 385 85 160 500 200 -65 to +150 -65 to +150 V m A m A m W °C °C Units Note 1: Device Mounted on FR-4 board 1.0 inch x 0.85 inch x 0.062 inch, with minimum pad layout. THERMAL CHARACTERISTICS .. Characteristic Thermal Resistance, Junction to Ambient Symbol R thja Value 625 Units °C/W 12/9/2008 Page .panjit. ELECTRICAL CHARACTERISTICS (Each Diode) Characteristic Reverse Breakdown Voltage (Note 2) IR = 100u A IF = 1.0m A IF = 10m A Forward Voltage (Note 2) IF = 50m A IF = 150m A Reverse Leakage Current (Note 2) VR = 75V VR = 75V, Tj = 150°C Total Capacitance VR = 0V, f = 1.0 MHz Per Element Data Line to Ground Between Data Lines Reverse Recovery Time IF = IR = 10m A Irr = 1.0m A, RL = 100 Ohm t rr CT IR VF Symbol V BR 85 - TJ = 25°C, unless otherwise noted Min Typ 0.76 0.84 0.92 1.00 1.25 2.0 3.0 Max 0.90 1.00 1.10 1.25 5.0 80 2.0 6 7 3.0 us p F n A V Units V Note 2: Short duration test pulse to minimize self heating ELECTRICAL CHARACTERISTIC CURVES (Each Diode) IF , Forward Current (m A) IR , Reverse Leakage (n A) TA = 125 °C V R = 75V TA = - 25 °C TA = 75 °C TA = 25 °C 0.1 .....