PJA3409
PJA3409 is P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@-10V, ID@-2.9A<110mΩ
- RDS(ON) , VGS@-4.5V, ID@-1.9A<150mΩ
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc.
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: SOT-23 Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0003 ounces, 0.0084 grams
- Marking: A09
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT -30 +20 -2.9 -11.6 1.25 10
-55~150
UNITS V V A A W m W/ o C o C o C/W
March 10,2014-REV.00
Page 1
PPJA3409
Electrical Characteristics (TA=25o C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward...