• Part: PJA3412
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 209.45 KB
Download PJA3412 Datasheet PDF
PanJit Semiconductor
PJA3412
PJA3412 is N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON) , VGS@4.5V, ID@4.1A<56mΩ - RDS(ON) , VGS@2.5V, ID@2.8A<68mΩ - RDS(ON) , VGS@1.8V, ID@1.5A<95mΩ - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc. - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: SOT-23 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0003 ounces, 0.0084 grams - Marking: A12 SOT-23 Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 20 +12 4.1 16.4 1.25 10 -55~150 UNITS V V A A W m W/ o C o C o C/W March 10,2014-REV.00 Page 1 PPJA3412 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State...