PJA3415AE
PJA3415AE is P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@-4.5V, ID@-4.3A<50mΩ
- RDS(ON) , VGS@-2.5V, ID@-4.0A<58mΩ
- RDS(ON) , VGS@-1.8V, ID@-2.4A<73mΩ
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc
- ESD Protected 2KV HBM
- Lead free in pliance with EU Ro HS 2011/65/EU directive
- Green molding pound as per IEC61249 Std.
Mechanical Data
- Case: SOT-23 Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0003 ounces, 0.0084 grams
- Marking: A5AE
Unit : inch(mm)
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT -20 +8 -4.3 -17.2 1.25 10
-55~150
UNITS V V A A W m W/ o C o C o C/W
January 22,2015-REV.01
Page 1
PPJA3415AE
Electrical
Characteristics...