• Part: PJA3415AE
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 307.53 KB
Download PJA3415AE Datasheet PDF
PanJit Semiconductor
PJA3415AE
PJA3415AE is P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON) , VGS@-4.5V, ID@-4.3A<50mΩ - RDS(ON) , VGS@-2.5V, ID@-4.0A<58mΩ - RDS(ON) , VGS@-1.8V, ID@-2.4A<73mΩ - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc - ESD Protected 2KV HBM - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. Mechanical Data - Case: SOT-23 Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0003 ounces, 0.0084 grams - Marking: A5AE Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT -20 +8 -4.3 -17.2 1.25 10 -55~150 UNITS V V A A W m W/ o C o C o C/W January 22,2015-REV.01 Page 1 PPJA3415AE Electrical Characteristics...