PJA3435
PJA3435 is P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- Low Voltage Drive (1.2V).
- Advanced Trench Process Technology
- Specially Designed for Load switch, PWM Application, etc.
- ESD Protected
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: SOT-23 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0003 ounces, 0.0084 grams
- Marking: A35
Unit: inch(mm)
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT -20 +10 -0.5 -1.0 500 4
-55~150
UNITS V V A A m W m W/ o C o C o C/W
December 24,2014-REV.00
Page 1
PPJA3435
Electrical
Characteristics o
(TA=25 C unless otherwise...