PJB24N10 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@30A=24mΩ - Low On Resistance - Excellent Gate Charge x RDS(ON) Product ( FOM ) - Fully Characterized Avalanche Voltage and Current - Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification - ponent are in pliance with EU Ro HS 2002/95/EC directives MECHANICAL DATA - Case: TO-263 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING B24N10 PACKAGE TO-263 PACKING 800PCS/REEL Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te - S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1) S ymb o l V DS V GS ID ID M TA = 2 5 OC Li mit 100 +2 0 42 160 105 0 .8 4 -5 5 to +1 5 0 680 1 .2 6 2 .5 Uni ts V V A A W M a xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e PD T J ,T S TG E AS R θJC R θJA Avalanche Energy with Single Pulse IAS=17A, VDD=80V, L=4.7mΗ m J Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance .. Note: 1. Maximum DC current limited by the package C /W C...