PJD06N03 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@30A=6mΩ - RDS(ON), VGS@4.5V,IDS@30A=9mΩ - Advanced trench process technology - High Density Cell Design For Uitra Low On-Resistance - Specially Designed for DC/DC Converters and Motor Drivers - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet Ro HS environment substance directive request MECHANICALDATA - Case: TO-252 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : 06N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RθJ C RθJ A Li mi t 25 +20 60 280 6 2 .5 3 7 .5 -5 5 to + 1 5 0 180 2 .0 50 U ni t s V V A A W M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5m H Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C m J C /W C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL.19.2006 PAGE . 1 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance Dynamic V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f...