Download PJD1NA80 Datasheet PDF
PanJit Semiconductor
PJD1NA80
PJD1NA80 is 800V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON), VGS@10V,ID@0.5A<16Ω - High switching speed - Improved dv/dt capability - Low Gate Charge - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data - Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams - TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams - SOT-223 Approx. Weight : 0.043 ounces, 0.123grams - TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25o C Derate above 25o C VDS VGS ID IDM EAS Operating Junction and Storage Temperature Range TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA TO-251AB 34...