PJD1NA80
PJD1NA80 is 800V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V,ID@0.5A<16Ω
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
TO-220AB
SOT-223
TO-252
TO-251AB
Mechanical Data
- Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
- TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
- SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
- TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25o C Derate above 25o C
VDS VGS ID IDM EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
RθJC RθJA
TO-251AB
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