PJDLC12 Datasheet | PanJit Semiconductor

FEATURES - Maximum capacitance @ 0 Vdc Bias of 1.2 p F between terminals 1-3 or terminals 2-3 - IEC61000-4-2 esd 15k V Air, 8k V contact pliance - In pliance with EU Ro HS 2002/95/EC directives 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) MECHANICALDATA - Case: SOT-23, plastic - Terminals: solderable per MIL-STD-750, Method 2026 - Apporx. Weight: 0.0003 ounce, 0.0084 gram 0.004(0.10)MAX. Fig.21 MAXIMUM RATINGS Parameter Op e r a ti ng J unc ti o n S to ra g e Te m p e ra tur e Ra ng e Symbol TJ T S TG Value -55 to +125 -55 to +150 Units ELECTRICAL CHARACTERISTICS PJDLC03 Marking DL3 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse w w w . D Leakage a t a Current S h e e t 4 U . c o m Clamping Voltage Symbol VRWM VBR IR VC Conditions I T=1m A VRWM = 3.3V, T = 25OC I PP = 1A t p = 8/20 μs I PP = 5A t p = 8/20 μs Between pin1.2 to 3 V R=0V,f=1MHz Min. 4 Typ. Max. 3.3 50 6.5 Units V V μA V Clamping Voltage Junction Capacitance VC CJ - - 8 1.2 V p F October 12,2010-REV.00 PAGE . 1 PJDLC03~PJDLC24 PJDLC05 Makring T2S Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Symbol VRWM VBR IR VC Conditions I T=1m A VRWM = 5V, T = 25OC I PP = 1A t p = 8/20 μs I PP = 5A t p = 8/20 μs Between pin1.2 to 3 VR=0V,f=1MHz Min. 6 Typ. Max. 5 20 9.8 Units V V μA V Clamping Voltage Junction Capacitance VC CJ - - 11 0.65 V p F PJDLC12 Makring DJ2 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Symbol VRWM VBR IR VC Conditions I T=1m A VRWM = 12V, T = 25OC I PP = 1A t p = 8/20 μs I PP = 5A t p = 8/20 μs Between pin1.2 to 3 VR=0V,f=1MHz Min. 13.3 Typ. Max. 12 1 19 Units V V μA V Clamping Voltage Junction Capacitance VC CJ - - 24 1.2 V p F PJDLC15 Makring DJ5 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Symbol VRWM VBR IR VC Conditions I T=1m A VRWM = 15V, T = 25OC I PP = 1A t p...