PJESDA5V6-4LCG Datasheet | PanJit Semiconductor

FEATURES - ESD Protection : IEC61000-4-2 - Four Separate Unidirectional Configurations for Protection - Low Leakage Current < 1 µ A @ 3Volts - Power Dissipation : 380m W - Low Capacitance - In pliance with EU Ro HS 2002/95/EC directives SOT-553 MECHANICAL DATA - Case: SOT-553, Molded Plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Polarity: See Diagram Below - Approx. Weight: 0.002 gram - Mounting Position: Any MAXIMUM RATINGS (TA=25o C unless otherwise noted) Parameter Peak Power Dissipation (8x20 µs@TA=25o C) (Note 1) Steady State Power-1 Diode (Note 2) Thermal Resistance, Junction-to-Ambient Above 25o C Derate Maximum Junction Temperature Operating Junction and Storage Temperature Range Lead Solder Temperature (10 seconds duration) Symbol PPK PD RΘJA TJMAX TJ,TSTG TL Value 20 380 327 3.05 150 -55 to +150 260 Units W m W O C/W m W/OC ELECTRAICAL CHARACTERISTICS(TA=25o C) B r e a k d o wn Vo lta g e V BR @1 m A (V o lts ) M i n. PJESDA5V6-4LCG PJESDA6V2-4LCG PJESDA6V8-4LCG 5.32 5.89 6.37 No m. 5.60 6.20 6.71 M a x. 5.88 6.51 7.04 Leakage Current IRM @V RM V RWM 3.0 4.3 5 IRWM (m A ) 0.5 0.5 0.5 Typ Capacitance@0V Typ Capacitance@3V Marking Bias (p F)(Note 3) Bias (p F)(Note 3) Ty p 13 12 12 Max 17 16 15 Ty p 7.0 7.0 6.7 Max 11.5 10.0 9.5 Part Number VCMAX@IPP VC(V) 13 13 13 I PP(A) 1.6 1.6 1.6 C ode SH SJ SL .. NOTES : 1.Non-repetitive current per Figure 1. 2.Only 1 diode under power. For all 4 diodes under power,P D will be 25%. Mounted on FR-4 board with min pad. 3.Capacitance of one diode at f=1MHz, V R =0V, T A =25 o C STAD-JAN.15.2008 PAGE . 1 PJESDA5V6-4LCG SERIES .. STAD-JAN.15.2008 PAGE . 2 PJESDA5V6-4LCG SERIES MOUNTING PAD LAYOUT ORDER...