PJESDA5V6-5G Datasheet | PanJit Semiconductor

FEATURES - Low Leakage < 1 A@VRWM - Breakdown Voltage : 5.6Volt-6.7Volt@1m A - ESD Protection Meeting IEC61000-4-2-Level 4 - In pliance with EU Ro HS 2002/95/EC directives SOT-563 MECHANICAL DATA Case : SOT-563, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.003 gram MAXIMUM RATINGS (TA=25o C unless otherwise noted) Parameter P e a k P o we r D i s s i p a ti o n (8 x2 0  s @ T A = 2 5 o C )(No t e 1 ) S t e a d y S t a te P o we r- 1 D i o d e ( No t e 2 ) The r ma l Re s i s ta nc e J unc t i o n t o A m b i e nt A b o ve 2 5 o C , D e ra t e L e a d S o ld e r Te m p e ra t ure ( 1 0 s e c o nd s d ura t i o n) O p e r a t i ng J unc t i o n a nd S t o ra g e Te m p e ra t ure R a ng e Symbol P PK PD RJA TL T J ,T S TG Limits 40 300 370 2.7 260 -55 to +150 Unit W m W C/W m W/o C o o C C o Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Condtions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA=25o C) B re a k do wn Volta g e V B R @1m A ( Vo lts ) Mi n V PJESDA5V6-5G 5.32 5.89 6.37 No m V 5.6 6.2 6.7 Ma x V 5.88 6.51 7.04 L e a k ag e C urre nt I RM @V RM V RWM V 3.0 4.3 5.0 I V C Ma x@I P P VC V 10 11 12 I PP A 5.0 4.5 4.0 Part Number Ma x Capacitance @0V Bias (1MHz) p F 45 40 35 Marking A 1 1 1 SB SC SD .. PJESDA6V2-5G PJESDA6V8-5G 1.Non-repetitive current per Figure 1. 2.Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR-4 board with min pad REV.0.1-JUN.11.2009 PAGE . 1 PJESDA5V6-5G SERIES 1 2 PJESDA6V8-5G PJESDA6V2-5G .. REV.0.1-JUN.11.2009 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION - Packing information...