PJL9812
PJL9812 is Dual N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@10V, ID@6A<35mΩ
- RDS(ON) , VGS@4.5V, ID@4A<40mΩ
- RDS(ON) , VGS@2.5V, ID@2A<54mΩ
- Advanced Trench Process Technology
- ESD Protected 2KV HBM
- High density cell design for ultra low on-resistance
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: SOP-8 package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0029 ounces, 0.083 grams
- Marking: L9812
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation
TA=25o C TA=70o C
TA=25o C TA=70o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t≦10s (Note 5)
SYMBOL VDS VGS ID IDM PD
TJ,TSTG
RθJA
LIMIT 30 +12 6 4.8 24 2 1.3
-55~150
UNITS V V A A W o C o C/W
July 27,2015-REV.00
Page 1
PPJL9812
Electrical
Characteristics o
(TA=25 C unless otherwise...