PJLCDA05 Datasheet | PanJit Semiconductor

FEATURES - 400W Power Dissipation (8x20µsec Waveform) - Very Low Leakage Current, Maximum of 5µA @ 5Vdc - Maximum Capacitance @ 1MHz Zero dc Bias, of 1.2p F - Unidirectional, 2.4p F Bi-directional - IEC61000-4-2 ESD 15k V air, 8k V Contact pliance - IEC61000-4-5 (Lightning) 17 Amps peak, 8x20µsec 4 3 1 1 2 3 4 SOIC-8 8 7 6 5 APPLICATIONS - Personal Digital Assistant (PDA) - Universal Serial Bus (1.1 and 2.0) and Fire Wire Port - Portable Instrumentation - Portable Consumer Electronics - Ethernet 10, 100, and 1000 Base Port Protection MAXIMUM RATINGS Rating Peak Pulse Power (8x20µsec Waveform) Peak Pulse Current (8x20µsec Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P PK IPP V ESD TJ Tstg Value 400 17 >25 -55 to +125 -55 to +150 Units W A k V ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off-State Junction Capacitance Maximum Peak Pulse Current (PER DEVICE) Conditions Min. Typical Max. 5 IBR = 1m A V R = 5V IPP = 1A IPP = 5A 0 Vdc Bias f = 1MHz Per Device 8x20µsec Waveform 6 5 10 13 1.2 17 Units V V µA V V p F A Symbol VRWM V BR IR VC VC Cj IPP DATE : MAY.05.2003 PAGE 1 RATING AND CHARACTERISTIC CURVES 110 100 90 80 8x20 m sec Peak Current, Amps 16 14 Percent of Ipp 70 60 50 40 30 20 10 0 Rise time 10-90% - 8 m s 0 5 10 15 20 50% of Ipp @ 20 m s 10 8 6 4 2 0 6 8 10 12 14 16 18 20 22 24 Clamping Voltage, Volts Clamping Voltage vs Ipp 8x20msec time, m sec Pulse...