PJQ5478 Datasheet | PanJit Semiconductor

Features - RDS(ON) , VGS@10V, ID@30A<12mΩ - Advanced Trench Process Technology - High density cell design for ultra low on-resistance - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: DFN5060-8L Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0028 ounces, 0.08 grams - Marking: Q5478 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TC=25o C TC=100o C TC=25o C TC=25o C TC=100o C Continuous Drain Current TA=25o C TA=70o C Power Dissipation TA=25o C TA=70o C Single Pulse Avalanche Energy(Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance(Note 4,5) Junction to Case Junction to Ambient - Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD EAS TJ,TSTG RθJC RθJA LIMIT 100 +20 60 38 150 83 33 9 7.5 2.0 1.3 156 -55~150 1.5 62.5 UNITS V...