PJS6601
PJS6601 is Complementary Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc.
- Lead free in pliance with EU Ro HS 2011/65/EU directive
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: SOT-23 6L Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0005 ounces, 0.014 grams
- Marking: SC1
Unit: inch(mm)
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS 20
-20
VGS +12
+12
ID 4.1 -3.1
IDM 16.4 -12.4
1.25 PD
TJ,TSTG
-55~150
RθJA
UNITS V V A A W m W/ o C o C o...
