PJS6833 Datasheet | PanJit Semiconductor

Features - RDS(ON) , VGS@-4,5V, ID@-1.1A<370mΩ - RDS(ON) , VGS@-2.5V, ID@-0.5A<540mΩ - RDS(ON) , VGS@-1.8V, ID@-0.1A<970mΩ - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc. - ESD Protected 2KV HBM - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case: SOT-23 6L Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0005 ounces, 0.0141 grams - Marking: SG3 Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note 4) Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient(Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT -30 +8 -1.1 -4.4 1.25 10 -55~150 UNITS V V A A W m W/ o C o C o C/W January 20,2022 PJS6833-REV.03 Page 1 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State...