PJSD03LCFN2 Datasheet | PanJit Semiconductor

FEATURES - 40W Power Dissipation (8/20μs Waveform) - Low Leakage Current, Maximum of 2.5μA@3.3Vdc - Very low Clamping voltage - IEC 61000-4-2 ESD 30k V air, 30k V Contact pliance - In pliance with EU Ro HS 2002/95/EC directives - Terminals : Solderable per MIL-STD-750, Method 2026 - Case : DFN 2L, Plastic - Marking : BS 0.022(0.55) 0.017(0.45) 0.002(0.05)MAX. 0.042(1.05) 0.037(0.95) APPLICATIONS - Video I/O ports protection - Set Top Boxes - Portable Instrumentation 0.013(0.32) 0.008(0.22) 0.026(0.65) 0.021(0.55) PIN NO.1 IDENTIFICATION MAXIMUM RATINGS Rating Peak Pulse Power (8/20 μs Waveform) Peak Pulse Current (8/20 μs Waveform) O p e ra t i ng J unc t i o n a nd S t o ra g e Te m p e r a tur e Ra ng e Symbol Value 40 6 -55 to +150 Units W A PPP I PPM T J , T S TG 0.022(0.55) 0.047(0.45) ELECTRICAL CHARACTERISTICS (TJ=25o C) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current .. Clamping Voltage (8/20μs) Off State Junction Capacitance Symbol VWRM VBR IR VC CJ I BR=1m A VR=3.3V I PP =6A 0 Vdc Bias f=1MHz Conditions Min. 5.4 Typ. Max. 3.3 7.0 2.5 10 25 Units V V μA V p F PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE January 05,2011-REV.00 PAGE . 1 TYPICAL CHARACTERISTICS V C , Clamping Voltage (V) 10 TJ =25° 9 8 7 6 0 2 4 6 8 I R, Leakage Current (n A) 0.1...