• Part: PJSD03LCTM
  • Description: BI-DIRECTIONAL ESD PROTECTION DIODE
  • Category: Diode
  • Manufacturer: PanJit Semiconductor
  • Size: 270.76 KB
Download PJSD03LCTM Datasheet PDF
PanJit Semiconductor
PJSD03LCTM
PJSD03LCTM is BI-DIRECTIONAL ESD PROTECTION DIODE manufactured by PanJit Semiconductor.
FEATURES - 50W Power Dissipation (8/20μs Waveform) - Low Leakage Current, Maximum of 2.5μA@3.3Vdc - Very low Clamping voltage - IEC 61000-4-2 ESD + 15k V air, + 8k V Contact pliance - /HDGIUHHLQFRPSOZLWK(85R+6(&GLUHFWLYHV ‡- UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.00002 ounces, 0.0005grams - Case : SOD-923, Plastic - Marking : O 0.034(0.85) 0.029(0.75) 0.026(0.65) 0.021(0.55) 0.018(0.45) 0.013(0.35) 0.010(0.25) 0.005(0.15) APPLICATIONS - Video I/O ports protection - Set Top Boxes - Portable Instrumentation 0.007(0.18) 0.003(0.08) 0.042(1.05) 0.037(0.95) MAXIMUM RATINGS (TA=25o C unless otherwise noted) RATING Peak Pulse Power (8/20 μs Waveform) Peak Pulse Current (8/20 μs Waveform) IE C 61000-4-2 C ontact IE C 61000-4-2 A i r Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e r a ture Ra ng e SYMBOL PPP I PPM VESD VESD TJ,TSTG VALUE 50 3 +8 +15 -55 to +150 ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted) PARAMETER Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20ms) Off State Junction Capacitance SYMBOL CONDITION VRWM VBR I BR=1m A I R VR=3.3V VC I PP=3A CJ 0 Vdc Bias f=1MHZ MIN. TYP. MAX. - - 3.3 5.4 - 7.0 - -...