PJSD03LCTS Datasheet | PanJit Semiconductor

FEATURES - 120 Watts peak pules power( tp=8/20µs) - Small package for use in portable electronics - Suitable replacement for MLV’S in ESD protection applications - Low clamping voltage and leakage current - In pliance with EU Ro HS 2002/95/EC directives 3~5 Volts POWER 120 Watts APPLICATIONS - Case: SOD-523 plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Approx Weight: 0.0014 grams - Marking : PJSD03LCTS : PL PJSD05LCTS : PM Fig.139 MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature Symbol Value 120 25 -55 to 150 -55 to 150 Units W KV P PK V ESD TJ TSTG ELECTRICAL CHARA CTERISTICS PJSD03LCTS Parameter Reverse Stand-Off Voltage .. Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Symbol VRWM V BR IR VC CJ Conditions I BR=1m A VR=3.3V I PP=5A 0Vdc Bias=f=1MHz Min. 4 Typical 4.9 9.5 0.5 Max. 3.3 100 11 3 Units V V µA V p F REV.0.3-DEC.23.2009 PAGE . 1 PJSD03LCTS~PJSD05LCTS PJSD05LCTS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Symbol VRWM V BR IR VC CJ Conditions I BR=1m A VR=5V I PP=5A 0Vdc Bias=f=1MHz Min. 6.0 Typical 6.7 11 0.5 Max. 5 20 13 3 Units V V µA V p F I PP-Peak Pulse Current-% of I PP 120 tf 100 80 e 60 40 20 0 0 5 10 t d=t I PP/2 -t 100 Peak Value I PP TEST m m %Of Rated Power WAVEFORM PARAMETERS 80 60 40 20 0 Peak Pulse Power 8/20 m...