PJSD05 Datasheet | PanJit Semiconductor

FEATURES 400W Power Dissipation (8/20µs Waveform) Very Low Leakage Current IEC61000-4-2 ESD 15k V air, 8k V Contact pliance SOD123 Package APPLICATIONS Personal Digital Assistant (PDA) Digital Cameras Portable Instrumentation Mobile Phones and Accessories Desktops, Laptops SOD123 SOD123 MAXIMUM RATINGS Rating Peak Pulse Power (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 400 25 -55 to +125 -55 to +150 Units W k V °C °C ELECTRICAL CHARACTERISTICS Tj = 25°C Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current .. Clamping Voltage (8/20µs) Clamping Voltage (820µs) Off State Junction Capacitance Off State Junction Capacitance Symbol V WRM VBR IR Vc Vc Cj Cj I BR = 1 m A VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz 5 Vdc Bias f = 1MHz Conditions Min Typical Max 5 Units V V 6.0 20 7.5 16 550 235 µA V V p F p F 2/18/2009 Page .panjit. PJSD05 Series ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1m A VR = 12V I pp = 5A I pp = 17A 0 Vdc Bias f = 1MHz Conditions Min Typical Max 12 Units V V 13.3 1 14.5 23 180 µA V V p F PJSD15 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1m A VR = 15V I pp = 5A I pp = 14A 0 Vdc Bias f = 1MHz Conditions...